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The focused ion beam technique is used to modify the surface and fabricate structures on substrates of almost any material. The significance of silicon Si and silicon dioxide SiO2 for modern nanotechnologies calls for comparative analysis of their sputtering by focused ion beam under the same experimental conditions. In this work, a comparison of sputtering processes of monocrystalline silicon and thermal silicon dioxide is made. Two types of rectangular boxes were formed, having a low and a high aspect ratio, and their cross sections were studied by scanning electron microscopy. It has been established that in both materials the rectangular boxes of the first and second types had almost the same shape despite significant differences in the physical properties of Si and SiO2. Modeling of the formation of structures was carried out by the level set method using the known experimental dependencies of the sputtering yield. To consider sputtering by reflected ions, the Monte Carlo method was used to calculate their angular and energy distributions. These dependencies, as well as the sputtering rates of Si and SiO2 by reflected ions established on their basis, had almost identical shape indicating similar sputtering mechanisms of these materials. The superimposition of the calculated profiles of the formed rectangular boxes on the experimental micrographs of their cross sections has made it possible to establish that the simulation adequately describes the shape of the obtained structures with a low aspect ratio for both materials. For structures with a high aspect ratio, a satisfactory agreement between the simulation results and experimental data has been established for a sample of single-crystal silicon, and for rectangular boxes in silicon dioxide the discrepancy in the depth of the calculated and experimental profiles is about 10 %.
  • Key words: focused ion beam, sputtering, level set method, Monte Carlo simulation, silicon, silicon dioxide
  • Published in: Technological processes and routes
  • Bibliography link: Rumyantsev A. V., Borgardt N. I. Comparison of silicon and silicon dioxide sputtering by a focused ion beam. Proc. Univ. Electronics, 2024, vol. 29, no. 1, pp. 30–41. https://doi.org/ 10.24151/1561-5405-2024-29-1-30-41
  • Financial source: The work has been supported by the Russian Science Foundation (Agreement no. 23-19-00649) using the shared equipment of the Collective-Use Center “Diagnostics and Modification of Microstructures and Nanoobjects”.
Alexander V. Rumyantsev
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)
Nikolay I. Borgardt
National Research University of Electronic Technology (Russia, 124498, Moscow, Zelenograd, Shokin sq., 1)
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